1 item symbol ratings unit drain-source voltage v ds 150 v dsx *5 120 continuous drain current i d tc=25 c 23 ta=25 c 3.1 ** pulsed drain current i d(puls] 92 gate-source voltage v gs 30 non-repetitive avalanche current i as *2 23 maximum avalanche energy e as *1 130.9 maximum drain-source dv/dt dv ds /dt *4 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d tc=25 c 105 ta=25 c 2.4 ** operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3605-01 fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =150v v gs =0v v ds =120v v gs =0v v gs =30v i d =8a v gs =10v i d =8a v ds =25v v cc =48v i d =8a v gs =10v r gs =10 ? min. typ. max. units v v a na m ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient r th(ch-a) ** channel to ambient 1.191 87.0 52.0 c/w c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =75v v gs =0v f=1mhz v cc =75v i d =16a v gs =10v l=363 h t ch =25c i f =16a v gs =0v t ch =25c i f =16a v gs =0v -di/dt=100a/s t ch =25c v v a a a v a mj kv/s kv/s w c c 150 3.0 5.0 25 250 10 100 79 105 612 760 1140 130 195 69 12 18 2.8 4.2 22 33 6.2 9.3 21 31.5 9 13.5 69 23 1.10 1.65 0.13 0.59 -55 to +150 outline drawings (mm) equivalent circuit schematic super f ap-g series *3 i f -i d , -di/dt=50a/s, vcc bv dss , tch 150c = < = < = < *4 v ds 150v < = *5 v gs =-30v ** surface mounted on 1000mm 2 , t=1.6mm fr-4 pcb(drain pad area : 500mm 2 ) ** surface mounted on 1000mm 2 , t=1.6mm fr-4 pcb(drain pad area : 500mm 2 ) g : gate s2 : source d : drain s1 : source 200304 *1 l=363h, vcc=48v,tch=25c, see to avalanche energy graph *2 tch 150c = < foot print pattern
2 characteristics 2SK3605-01 fuji power mosfet id=f(vgs):80s pulse test, vds=25v,tch=25c id=f(vds):80s pulse test,tch=25c gfs=f(id):80s pulse test, vds=25v,tch=25c 024681012 0 10 20 30 40 50 60 20v 7.0v 10v 8v 6.5v 7.5v 6.0v id [a] vds [v] typical output characteristics vgs=5.5v 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance 0 25 50 75 100 125 150 0 1 2 3 4 5 surface mounted on 1000mm 2 ,t=1.6mm fr-4 pcb (drain pad area : 500mm 2 ) allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 255075100125150 0 20 40 60 80 100 120 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 i as =9a i as =14a i as =23a eas [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(as)=f(starting tch):vcc=48v
3 2SK3605-01 fuji power mosfet vgs=f(qg):id=16a, tch=25c if=f(vsd):80s pulse test,tch=25c -50 -25 0 25 50 75 100 125 150 0 50 100 150 200 250 300 rds(on) [ m ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=8a,vgs=10v -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250 a vgs(th) [v] tch [ c] 0 10203040 0 2 4 6 8 10 12 14 qg [nc] typical gate charge characteristics vgs [v] vcc= 75v 10 -1 10 0 10 1 10 2 10 -3 10 -2 10 -1 10 0 c [nf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode rds(on)=f(id):80s pulse test, tch=25c 0 10203040 0.00 0.05 0.10 0.15 0.20 0.25 0.30 7.0v 6.5v rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 8v 7.5v 6.0v vgs= 5.5v
4 2SK3605-01 fuji power mosfet t=f(id):vcc=48v, vgs=10v, rg=10 ? 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id td(on) tr tf td(off) t [ns] id [a] 0 1000 2000 3000 4000 5000 0 10 20 30 40 50 60 70 80 90 100 rth(ch-a) [ c/w] drain pad area [mm 2 ] thermal resistance vs. drain pad area t=1.6mm fr-4 pcb http://www.fujielectric.co.jp/denshi/scd/ 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=48v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec]
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